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MSA-0500 Ver la hoja de datos (PDF) - HP => Agilent Technologies

Número de pieza
componentes Descripción
Fabricante
MSA-0500
HP
HP => Agilent Technologies HP
MSA-0500 Datasheet PDF : 4 Pages
1 2 3 4
MSA-0500 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
225 mA
Power Dissipation[2,3]
3.0 W
RF Input Power
+25 dBm
Junction Temperature
200°C
Storage Temperature
–65 to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 50 mW/°C for TMS␣ >␣ 140 °C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods.
Thermal Resistance[2,4]:
θjc = 20°C/W
Electrical Specifications[1], TA = 25°C
Unless otherwise noted, performance is for a MSA-0500 used with an external 45 pF capacitor. See bonding diagram.
Symbol
Parameters and Test Conditions[2]: Id = 165 mA, ZO = 50
P1 dB
GP
GP
f3 dB
Output Power at 1 dB Gain Compression
Power Gain (|S21| 2)
Gain Flatness
3 dB Bandwidth3
f = 1.0 GHz
f = 0.1 GHz
f = 0.1 to 2.0 GHz
VSWR
Input VSWR
Output VSWR
f = 0.1 to 2.0 GHz
f = 0.1 to 2.0 GHz
IP3
Third Order Intercept Point
NF
50 Noise Figure
f = 1.0 GHz
f = 1.0 GHz
tD
Group Delay
f = 1.0 GHz
Vd
Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dBm
dB
dB
GHz
dBm
dB
psec
V 10.5
mV/°C
Typ. Max.
23.0
9.0
± 0.75
2.8
2.0:1
2.5:1
33.0
6.5
125
12.0 13.5
–16.0
Notes:
1. The recommended operating current range for this device is 80 to 200 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
3. Referenced from 0.1 GHz gain (Gp).
Bonding Diagram
Input Trace
Capacitor
(45 pF typ)
5 MSA
Die 2
1
4
3
Ground
Output
Trace
(backside
contact)
Ground
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-0500-GP4
100
Numbers refer to pin contacts listed on the Chip Outline.
6-347

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