PUMD2(1999) Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
PUMD2 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN/PNP resistor-equipped transistors
Product specification
PUMD2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
416
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
input-off voltage
input-on voltage
input resistor
IE = 0; VCB = 50 V
IB = 0; VCE = 30 V
IB = 0; VCE = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 5 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 100 µA; VCE = 5 V
IC = 5 mA; VCE = 300 mV
−
−
−
−
−
−
−
−
60
−
−
−
−
1.1
2.5 1.7
15.4 22
RR-----21--
resistor ratio
0.8 1
Cc
collector capacitance
TR1 (NPN)
TR2 (PNP)
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
−
−
−
100 nA
1
µA
50
µA
180 µA
−
150 mV
0.8 V
−
V
28.6 kΩ
1.2
2.5 pF
3
pF
1999 May 21
4
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