Reflective Object Sensor
OPB608A, OPB608B, OPB608C, OPB608R, OPB608V
Optek Technology
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
Infrared-LED (880nm)
VF
Forward Voltage
IR
Reverse Current
Visible Red-LED (650nm)
VF
Forward Voltage
VR
Reverse Voltage
Infrared VCSEL (850)
VF
Forward Voltage
IR
Reverse Current
ITH
Threshold Current
MIN Typ. MAX UNITS
CONDITIONS
—
1.7
V
IF = 20 mA
—
100
µA VR = 2.0 V
—
1.9 2.5
5.0
V
IF = 20 mA
V IR = 10.0 µA
—
2.15
V
IF = 12 mA
—
30
nA VR = 5 V
2.0
5.5 mA
θ
Beam Divergence
12
Deg. IF = 12 mA
Phototransistor
VBR/CEO
IECO
ICEO
Combined
IC(ON)
Collector Emitter Breakdown Voltage
30
Emitter Collector Reverse Current
—
Collector Emitter Dark Current
—
On-State Collector Current
OPB608A
2.0
OPB608B
1.0
OPB608C
0.5
OPB608R
1.0
—
V IC = 100 µA
100
µA VEC = 0.4 Volts
100
nA VCE = 5.0 V, Ee = ≤ 0.10 µW/cm2,
IF=0
—
mA
4.0
mA
—
mA VCE = 5.0 V, IF = 20 mA
d = 0.110 inch (2.79 mm)(1)(2)
6.0
mA
OPB608V
5.0
—
mA
IC(OFF)
NOTES:
Off-State Collector Current
—
100
nA
VCE = 5.0 V, IF = 20 mA
No reflective surface
(1) Distance from the measurement surface to reflective surface (see mechanical page outline).
(2) Measured using Eastman Kodak Gray card. The white side of the card uses as a 90% diffuse reflective surface. Reference Eastman
Kodak catalog # E152 7795
(3) All parameters are tested using pulse techniques.
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue A 06.04
Page 3 of 9