IL5(2004) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
IL5 Datasheet PDF : 9 Pages
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IL1/ IL2/ IL5
Vishay Semiconductors
Output
Parameter
Collector-emitter breakdown voltage
Test condition
Emitter-base breakdown voltage
Collector-base breakdown voltage
Collector current
Power dissipation
Derate linearly from 25 °C
t < 1.0 ms
Coupler
Parameter
Package power dissipation
Test condition
Derate linearly from 25 °C
Isolation test voltage (between
emitter and detector referred to
standard climate 23 °/50 %RH,
DIN 50014)
Creepage
Clearance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
Operating temperature
Junction temperature
Soldering temperature
2.0 mm from case bottom
Part
Symbol
Value
Unit
IL1
BVCEO
50
V
IL2
BVCEO
70
V
IL5
BVCEO
70
V
BVEBO
7.0
V
BVCBO
70
V
IC
50
mA
IC
400
mA
Pdiss
200
mW
2.6
mW/°C
Symbol
Ptot
VISO
RIO
RIO
Tstg
Tamb
Tj
Tsld
Value
250
3.3
5300
≥ 7.0
≥ 7.0
175
≥ 1012
≥ 1011
- 40 to + 150
- 40 to + 100
100
260
Unit
mW
mW/°C
VRMS
mm
mm
Ω
Ω
°C
°C
°C
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance junction to
lead
Test condition
IF = 60 mA
IR = 10 µA
VR = 6.0 V
VR = 0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
VF
1.25
1.65
V
VBR
6.0
30
V
IR
0.01
10
µA
CO
40
pF
Rthjl
750
K/W
www.vishay.com
2
Document Number 83612
Rev. 1.5, 26-Oct-04
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