HM6216255HJPI Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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Fabricante

HM6216255HJPI

4M high Speed SRAM (256-kword × 16-bit)

Hitachi -> Renesas Electronics 

HM6216255HI Series

Recommended DC Operating Conditions (Ta = –40 to +85°C)

Parameter

Symbol

Min

Typ

Supply voltage

VCC*2

VSS * 3

4.5

5.0

0

0

Input voltage

VIH

2.2

—

VIL

–0.5*1

—

Notes: 1. VIL (min) = –2.0 V for pulse width (under shoot) ≤ 8 ns

2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 8 ns

3. The supply voltage with all VCC pins must be on the same level.

4. The supply voltage with all VSS pins must be on the same level.

Max

5.5

0

VCC + 0.5*2

0.8

Unit

V

V

V

V

DC Characteristics (Ta = –40 to +85°C, VCC = 5.0 V ± 10 %, VSS = 0 V)

Parameter

Symbol Min

Typ*1 Max Unit Test conditions

Input leakage current

Output leakage

current*1

|ILI|

—

—

2

|ILO|

—

—

2

µA Vin = VSS to VCC

µA Vin = VSS to VCC

Operating power

12 ns cycle ICC

—

supply current

15 ns cycle ICC

—

Standby power supply 12 ns cycle ISB

—

current

15 ns cycle ISB

—

I SB1

—

—

200

mA

—

180

—

60

mA

—

50

0.1

5

mA

Output voltage

VOL

—

—

0.4

V

VOH

2.4

—

—

V

Note: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.

Min cycle

CS = VIL, Iout = 0 mA

Other inputs = VIH/VIL

Min cycle, CS = VIH,

Other inputs = VIH/VIL

f = 0 MHz

VCC ≥ CS ≥ VCC – 0.2 V,

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC – 0.2 V

IOL = 8 mA

IOH = –4 mA

Capacitance (Ta = +25°C, f = 1.0 MHz)

Parameter

Symbol

Min

Typ

Input capacitance*1

Cin

—

—

Input/output capacitance*1

CI/O

—

—

Note: 1. This parameter is sampled and not 100% tested.

Max

Unit

6

pF

8

pF

Test conditions

Vin = 0 V

VI/O = 0 V

5

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