GP1600FSM12 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
GP1600FSM12 Datasheet PDF : 10 Pages
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GP1600FSM12
3200
2800
2400
2000
Tj = 25˚C
Tj = 125˚C
1600
1200
800
400
0
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, VF - (V)
Fig.13 Diode typical forward characteristics
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
Conditions:
VGE = ±15V
Rg = 3.3Ω
200 Tcase = 125˚C
0
0
200
400
600
800 1000
Collector-emitter voltage, VCE - (V)
1200
Fig.14 Reverse bias safe operating area
10000
100
IC max. (single pulse)
1000
100
IC max. DC
(continuous)
50µs
100µs
tp = 1ms
10
1
10
Diode
Transistor
1
0.1
1
10
100
1000
10000
0.001
0.01
0.1
1
10
Collector-emitter voltage, Vce - (V)
Pulse width, tp - (s)
Fig.15 Forward bias safe operating area
Fig.16 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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