GP1600FSM12 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

GP1600FSM12

Single Switch IGBT Module

Dynex Semiconductor 

GP1600FSM12

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety

precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

T = 25˚C unless stated otherwise

case

Symbol

Parameter

Test Conditions

Max.

Units

VCES

V

GES

I

C

I

CM

P

max

Visol

Collector-emitter voltage

VGE = 0V

Gate-emitter voltage

-

Collector current

Maximum power dissipation

Isolation voltage

DC, Tcase = 82˚C

1ms, Tcase = 112˚C

Tcase = 25˚C (Transistor)

Commoned terminals to base plate.

AC RMS, 1 min, 50Hz

1200

V

±20

V

1600

A

3200

A

13.9

kW

2500

V

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Rth(j-c)

Rth(j-c)

R

th(c-h)

Thermal resistance - transistor

Thermal resistance - diode

Thermal resistance - Case to heatsink

(per module)

Tj

Junction temperature

T

Storage temperature range

stg

-

Screw torque

Conditions

DC junction to case

DC junction to case

Mounting torque 5Nm

(with mounting grease)

Transistor

Diode

-

Mounting - M6

Electrical connections - M4

Electrical connections - M8

Min. Max. Units

-

9 oC/kW

-

-

20 oC/kW

-

8 oC/kW

-

150 oC

-

125 oC

–40 125 oC

-

5 Nm

-

2 Nm

-

10 Nm

2/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

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