GBJ2510 Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd
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GBJ2510 Datasheet PDF : 3 Pages
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SEMICONDUCTOR
GBJ25 Series RRooHHSS
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
04
GBJ25
06
08
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
VRRM
VRSM
400 600 800
500 700 900
Maximum DC blocking voltage
Maximum average forward rectified output current, Tc = 85°C
VDC
IF(AV)
400 600 800
25
Peak forward surge current single sine-wave superimposed on
IFSM
350
rated load
10
1000
1100
1000
UNIT
12
1200 V
1300 V
1200 V
A
A
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
I2t
VISO
TJ
TSTG
508
A2s
2500
V
-40 to 150
ºC
-40 to 150
ºC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
TEST
SYMBOL
CONDITIONS
04
Maximum instantaneous forward drop per diode
IF = 12.5A
VF
Maximum reverse DC current at rated DC blocking
TA = 25°C
voltage per diod
IR
TA = 150°C
GBJ25
06
08
10
1.10
5
500
UNIT
12
V
µA
THERMAL AND MECHANICAL (TA = 25°C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
04
Typical thermal resistance
junction to case
Mounting
torque
± 10 %
to heatsink M3
Single-side heat dissipation, sine
half wave
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
RθJC(1)
Approximate weight
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
Ordering Information Tabel
GBJ25
06
08
10
1.0
0.8
6.5
UNIT
12
°C/W
N.m
g
Device code
GBJ
25 10 A
1
2
3
4
1 - Product type : “GBJ” Package,1Ø Bridge
2 - IF(AV) rating : "25" for 25A
3 - Voltage code : code x 100 = VRRM
4 - None for standard type
"A" for avalanche type, Minimum avalanche breakdown voltage = VRRM + 50V
Maximum avalanche breakdown voltage = VRRM + 500V
GBJ2506A for example, min. avalanche breakdown voltage V(BR) = 650V
max. avalanche breakdown voltage V(BR) = 1100V
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