2SB696 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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2SB696

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -5mA; RBE= °°

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; RBE= °°

V(BR)CBO Collector-Base Breakdown Voltage

lc= -5mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -5mA; lc= 0

VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A

VeE(on) Base-Emitter On Voltage

lc= -1A; VCE= -5V

ICBO

Collector Cutoff Current

Vcs= -80V; IE= 0 •

IEBO

Emitter Cutoff Current

VEB= -4V; lc= 0

hFE

DC Current Gain

lc= -1A; VCE= -5V

fr

Current-Gain—Bandwidth Product

lc= -1A; VCE= -5V

hFE Classifications

c

D

E

F

40-80 60-120 100-200 160-320

2SB696

MIN TYP. MAX UNIT

-120

V

-120

V

-150

V

-6

V

-0.6

V

-1.5

V

-0.1

mA

-0.1 mA

40

320

15

MHz

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