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NM27LV010B

1,048,576-Bit (128k x 8) Low Voltage EPROM

Fairchild Semiconductor 

NM27LV010B

1,048,576-Bit (128k x 8) Low Voltage EPROM

July 1998

General Description

The NM27LV010B is a high performance Low Voltage Electrically

Programmable Read Only Memory. It is manufactured using

Fairchild’s split gate AMG™ EPROM technology. This technology

allows the part to operate at speeds as fast as 250 ns over

industrial temperatures (-40°C to +85°C).

This Low Voltage and Low Power EPROM is designed with power

sensitive hand held and portable battery products in mind. This

allows for code storage of firmware for applications like notebook

computers, palm top computers, cellular phones, and HDD.

The NM27LV010B is one member of Fairchild’s growing Low

Voltage product family.

Features

s 2.7V to 3.3V operation

s 200 ns access time

s Low current operation

— 8 mA ICC Active Current @ 5 MHz (Typ)

— 15µA ICC Standby Current @ 5 MHz (Typ)

s Ultra low power operation

— 50 µW Standby Power @ 3.3V (Typ)

— 27 mW Active Power @ 3.3V (Typ)

s 32-pin TSOP Package

Block Diagram

Vcc

GND

Vpp

OE

PGM

CE

Output Enable,

Chip Enable &

Program Logic

Data Outputs O0 - O7

Output

Buffers

A0 - A16

Address

Inputs

Y

Decoder

X

Decoder

1,048,576-Bit

Cell Matrix

AMG™ is a trademark of WSI, Incorporated.

© 1998 Fairchild Semiconductor Corporation

1

DS012333-1

www.fairchildsemi.com

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