DTA144VKA Ver la hoja de datos (PDF) - ROHM Semiconductor
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DTA144VKA Datasheet PDF : 1 Pages
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Transistors
DTA144VUA / DTA144VKA / DTA144VSA
Digital transistor (built-in resistors)
DTA144VUA / DTA144VKA / DTA144VSA
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
!External dimensions (Units : mm)
DTA144VUA
ROHM : UMT3
EIAJ : SC-70
DTA144VKA
1.25
2.1
0.1to0.4
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
Each lead has same dimensions
!Equivalent circuit
R1
IN
R2
IN
OUT
GND(+)
OUT
GND(+)
ROHM : SMT3
EIAJ : SC-59
DTA144VSA
0.3to0.6
1.6
2.8
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
Each lead has same dimensions
4
2
ROHM : SPT
EIAJ : SC-72
0.45
2.5
5
(1) (2) (3)
0.5 0.45
(1) Emitter
(2) Collector
(3) Base
Taping specifications
!Absolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Power
DTA144VUA / DTA144VKA
dissipation DTA144VSA
Junction temperature
Storage temperature
Symbol
VCC
VI
IO
IC(Max.)
Pd
Tj
Tstg
Limits
−50
−40~+15
−30
−10
200
300
150
−55~+150
Unit
V
V
mA
mW
°C
°C
!Packaging, marking and packaging specifications
Type
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTA144VUA
UMT3
156
T106
3000
DTA144VKA
SMT3
E56
T146
3000
DTA144VSA
SPT
−
TP
5000
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Input voltage
Output voltage
VI(off)
VI(on)
VO(on)
−
−
−1
−6
−
−
−
−0.1 −0.3
V
VCC=−5V , IO=−100µA
VO=−0.3V , IO=−2mA
V IO=−10mA , II=−0.5mA
Input current
II
−
−
−0.16 mA VI=−5V
Output current
IO(off)
−
−
−0.5
µA VCC=−50V , VI=0V
DC current gain
GI
33
−
−
−
IO=−5mA , VO=−5V
Input resistance
R1
32.9
47
61.1
kΩ
−
Resistance ratio
R2/R1
0.17 0.21 0.26
−
−
Transition frequency
fT
−
250
−
MHz VCE=−10V , IE=5mA , f=100MHz
∗
∗ Transition frequency of the device.
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