2SC5545 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SC5545 Datasheet PDF : 8 Pages
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2SC5545
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO
15
voltage
Collector cutoff current
I CBO
—
Collector cutoff current
I CEO
—
Emitter cutoff current
I EBO
—
DC current transfer ratio
hFE
80
Collector output capacitance Cob
—
Typ
—
—
—
—
120
0.69
Gain bandwidth product
fT
Power gain
PG
10
12.6
14
16
Noise figure
NF
—
1.1
Ratings
15
6
1.5
50
150
150
–55 to +150
Max Unit
—
V
1
µA
1
mA
10
µA
160
V
1.1
pF
—
GHz
—
dB
2.0
dB
Unit
V
V
V
mA
mW
°C
°C
Test Conditions
IC = 10µA , IE = 0
VCB = 12V , IE = 0
VCE = 6V , RBE = Åá
VEB = 1.5V , IC = 0
VCE = 3V , IC = 20mA
VCB = 3V , IE = 0
f = 1MHz
VCE = 3V , IC = 20mA
VCE = 3V, IC = 20mA
f = 900MHz
VCE = 3V, IC = 5mA
f = 900MHz
2
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