SD303C04S10C Ver la hoja de datos (PDF) - Vishay Semiconductors
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SD303C04S10C Datasheet PDF : 10 Pages
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SD303C..C Series
Fast Recovery Diodes Vishay High Power Products
(Hockey PUK Version), 350 A
3.6
SD30 3C..S20C Series
3.4
TJ = 125 °C, V r = 30V
3.2
I FM = 750 A
Sq uare Pulse
3
400 A
200 A
2.8
2.6
2.4
10
10 0
Rate O f Fall O f Fo rwa rd Curre nt - di/dt (A /µs)
Fig. 18 - Recovery Time Characteristics
3 00
I FM = 750 A
Sq ua re Pulse
2 50
2 00
400 A
1 50
200 A
1 00
SD 3 0 3 C ..S2 0 C Se rie s
TJ = 1 2 5 ° C , V r = 3 0 V
50
10 20 30 40 50 60 70 80 90 100
Rate O f Fall O f Fo rw ard Current - di/dt (A /µs)
Fig. 19 - Recovery Charge Characteristics
130
120
I FM = 750 A
Sq uare Pu lse
110
100
400 A
90
80
200 A
70
60
50
40
SD 3 0 3 C ..S 2 0 C S e rie s
TJ = 1 2 5 °C , V r = 3 0 V
30
20
10 20 30 40 50 60 70 80 90 100
Rate O f Fall O f Forw ard Current - di/d t ( A/µs)
Fig. 20 - Recovery Current Characteristics
1E4
1E3
1E2
1E1
1E1
2 0 jo ule s pe r pulse
10
4
2
1
0 .4
0 .2
0 .1
0.04
0 .02
0.0 1
SD 3 0 3C ..S10 C S e ri es
Sin usoida l Pulse
tp
TJ = 1 25°C , V RRM= 1 1 2 0 V
d v/d t = 1000V / µs
1E 2
1E3
1 E4
Pulse Basew idth (µs)
20 jo u le s p er pulse
10
4
2
1
0.4
0 .2
0.1
SD 30 3 C ..S1 0 C Se rie s
Tr ape zo id al Pul se
TJ = 1 2 5°C , VRRM= 1 1 2 0V
tp
d v/ dt = 10 00V/ µs ; di/ dt=5 0 A/ µ s
1E1
1E2
1E3
1E4
P ulse Ba se w id t h (µ s)
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
Document Number: 93174
Revision: 04-Aug-08
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