SD303C04S10C Ver la hoja de datos (PDF) - Vishay Semiconductors
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SD303C04S10C Datasheet PDF : 10 Pages
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SD303C..C Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 350 A
2 .8
SD 3 0 3 C ..S1 0 C Se rie s
2 .6
TJ = 1 2 5 °C , V r = 3 0 V
2 .4
I FM = 750 A
Squ are Pu lse
2 .2
2
400 A
1 .8
200 A
1 .6
10
100
R ate O f Fall O f Fo rwa rd C urre nt - di/dt (A /µs)
Fig. 12 - Recovery Time Characteristics
3.6
SD 3 03C ..S 15C S eries
TJ = 1 2 5 °C , V r = 3 0 V
3.2
I FM = 750 A
2.8
Sq ua re Pulse
2.4
400 A
2
200 A
1.6
10
100
R ate O f Fa ll O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 15 - Recovery Time Characteristics
14 0
13 0
12 0
11 0
10 0
90
80
70
60
50
40
30
20
10
0
IFM = 750 A
Squ are Pulse
400 A
200 A
S D 3 0 3 C ..S 1 0 C Se rie s
TJ = 1 2 5 °C , V r = 3 0 V
20 40 60 80 100
Ra te O f Fall O f Fo rw ard Cu rrent - d i/dt (A /µs)
Fig. 13 - Recovery Charge Characteristics
170
160
IFM = 750 A
Squa re Pulse
150
140
130
120
400 A
110
100
200 A
90
80
70
SD 30 3C ..S 15C S eries
60
TJ = 1 2 5 ° C , V r = 3 0 V
50
10 20 30 40 50 60 70 80 90 100
Rate O f Fa ll O f Fo rw ard Current - di/dt (A /µs)
Fig. 16 - Recovery Charge Characteristics
1 00
IFM = 750 A
90
Square Pulse
400 A
80
70
200 A
60
50
40
SD 3 0 3 C ..S1 0 C Se rie s
30
TJ = 1 2 5 °C , V r = 3 0 V
20
20 30 40 50 60 70 80 90 100
Rate O f Fall O f Fo rwa rd Curre n t - di/d t (A/µs)
Fig. 14 - Recovery Current Characteristics
1 30
1 20
IFM = 750 A
Sq uare Pu lse
1 10
1 00
90
400 A
80
70
200 A
60
50
40
30
SD 3 0 3 C ..S1 5 C Se rie s
TJ = 1 2 5 ° C , V r = 3 0 V
20
10
10 20 30 40 50 60 70 80 90 100
R ate O f Fall O f Fo rw ard Cu rre nt - di/d t (A/µs)
Fig. 17 - Recovery Current Characteristics
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Document Number: 93174
Revision: 04-Aug-08
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