SD303C04S10C Ver la hoja de datos (PDF) - Vishay Semiconductors
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SD303C04S10C Datasheet PDF : 10 Pages
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SD303C..C Series
Fast Recovery Diodes Vishay High Power Products
(Hockey PUK Version), 350 A
55 0 0
50 0 0
45 0 0
A t A n y Ra t e d Lo a d C o n d it io n A n d W ith
R a t e d V RRMA p p lie d F o llo w in g Su rg e .
In itia l TJ = 1 2 5°C
@ 60 H z 0.0 083 s
@ 50 H z 0.0 100 s
40 0 0
35 0 0
30 0 0
2 5 0 0 SD 3 0 3 C ..C Se r ie s
20 0 0
1
10
1 00
N um be r O f E qua l Am p litude Ha lf C yc le C urrent Pulses (N )
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6000
5500
5000
4500
M a x im u m N o n R e p e t itiv e S u rg e C u rre n t
V e r su s P u lse T ra in D u ra t io n .
In itia l TJ = 125 ° C
N o V o lt a g e R e a p p lie d
R a t e d V RR MR e a p p lie d
4000
3500
3000
2500
2000 SD 303 C..C Se ries
1500
0.01
0.1
1
P u lse T ra in D u ra t io n (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
SD 3 0 3 C ..C Se r ie s
1 000
100
TJ = 2 5 ° C
TJ = 1 2 5 ° C
10
0123 45678
Insta nta ne o us Fo rw a rd V olta g e (V)
Fig. 9 - Forward Voltage Drop Characteristics
1
Stea d y S ta te V a lu e
R thJ-hs = 0.1 6 K / W
( Sin g le Sid e C o o le d)
R thJ-h s = 0.0 8 K / W
0 .1 ( D o u b le S id e C o o le d )
(D C O p e ra tion )
0.0 1
SD 3 0 3 C ..C Se rie s
0 .00 1
0 .00 01 0 .0 0 1 0.0 1 0.1
1
10 100
Sq u a re W a v e Pu lse D ur at io n ( s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
1 20
1 00
80
60
40
20
0
0
V
FP
I
TJ = 1 2 5°C
TJ = 2 5°C
S D 3 0 3 C ..S2 0 C Se rie s
200 400 600 800 1000 1200 1400 1600 1800 2000
R at e O f f F a ll O f F o rw a rd C u rre n t d i/ d t ( A / u se c )
Fig. 11 - Typical Forward Recovery Characteristics
Document Number: 93174
Revision: 04-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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