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MPF930 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza
componentes Descripción
Fabricante
MPF930
NJSEMI
New Jersey Semiconductor NJSEMI
MPF930 Datasheet PDF : 2 Pages
1 2
MPF930 MPF96O MPF990
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Win
Typ
Max
Unit
ON CHARACTERISTICS^) (Continued)
Static Drain-Source On Resistance
(VGS = 1 0 Vdc, ID = 1 .0 Adc)
MPF930
MPF960
MPF990
rDS(on)
Q
0.9
1.4
1.2
1.7
1.2
2.0
On-State Drain Current
(VDS = 25vdc, VGS = 1 °Vdc)
'D(on)
1.0
2.0
Amps
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 .0 MHz)
Reverse Transfer Capacitance
(vDs = 25 vdc, VGS = o, f = 1 .0 MHZ)
ciss
70
PF
crss
20
—•
PF
Output Capacitance
(VDS = 25 Vdc. VGS = o, f = 1 .0 MHZ)
CQSS
49
PF
Forward Transconductance
(VDS = 25 Vdc, ID = 0.5 Adc)
9fs
200
380
mmhos
SWITCHING CHARACTERISTICS
Turn-On Time
ton
7.0
15
ns
Turn-Off Time
toff
7.0
15
ns
2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
RESISTIVE SWITCHING
+25 V
T
?23
- ™ * TO SAMPLING SCOPE
50 Q INPUT
11
L^J
PUl^GtNbKAIOK
V.n^
| r 50 Q ATTENUATOR -, ^ -f ^
7C 90%
^\90%
i"5V "f-i t K T ' "
] Qj)
J~
L± J
~ §50 § 1 0 M
11 1
-
/
\/
OUTPUT
INVERTED v°ut~
~T /
90% Jr
10V 7^50%
PULSE
50%\~ WIDTH
^N
INPUT Vjn-*-J
Figure 1. Switching Test Circuit
Figure 2. Switching Waveforms

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