FZT853 Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

FZT853

NPN Silicon Planar High Current Transistor

TY Semiconductor 

SMD Type

Electrical Characteristics Ta = 25 unless otherwise stated

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Collector Cut-Off Current R 1KÙ

Emitter Cut-Off Current

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

Static Forward Current Transfer Ratio

Transition Frequency

Output Capacitance

Switching Times

Symbol

V(BR)CBO

V(BR)CER

V(BR)CEO

V(BR)EBO

ICBO

ICER

IEBO

VCE(sat)

VBE(sat)

VBE(on)

hFE

fT

Cobo

ton

toff

Testconditons

IC=100ìA

IC=1ìA, RB 1KÙ

IC=10mA*

IE=100ìA

VCB=120V

VCB=120V,Tamb=100

VCB=120V

VCB=120V,Tamb=100

VEB=6V

IC=0.1A, IB=50mA*

IC=1A, IB=50mA*

IC=2A, IB=50mA*

IC=6A, IB=300mA*

IC=6A, IB=300mA*

IC=6A, VCE=1V*

IC=10mA, VCE=1V

IC=2A, VCE=1V*

IC=5A, VCE=1V*

IC=10A, VCE=1V*

IC=100mA, VCE=10V,f=50MHz

VCB=10V, f=1MHz

IC=1A, IB1=100mA

IB2=100mA, VCC=10V

*Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2%

Transistors

Product specification

FZT853

Min Typ Max Unit

150 220

V

150 220

V

60 85

V

6

8

V

50 nA

1 ìA

50 nA

1 ìA

10 nA

50 mV

100 mV

170 mV

375 mV

1200 mV

1150 V

100 200

100 200 300

75 120

25 50

130

MHz

45

pF

45

ns

1100

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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