FZT653 Ver la hoja de datos (PDF) - KEXIN Industrial

Número de pieza

componentes Descripción

Fabricante

FZT653

NPN Silicon Planar High Performance Transistor

KEXIN Industrial 

SMD Type

Transistors

FZT653

Electrical Characteristics Ta = 25

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

Static Forward Current Transfer Ratio

Transition Frequency

Output Capacitance

Switching Times

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

VCE(sat)

VBE(sat)

VBE(on)

hFE

fT

Cobo

ton

toff

Testconditons

IC=100ìA

IC=10mA*

IE=100ìA

VCB=100V

VCB=100V,Tamb=100

VEB=4V

IC=1A, IB=100mA*

IC=2A, IB=200mA*

IC=1A, IB=100mA*

IC=1A, VCE =2V*

IC=50mA, VCE =2V*

IC=500mA, VCE =2V*

IC=1A, VCE =2V*

IC=2A, VCE =2V*

IC=100mA, VCE =5V,f=100MHz

VCB=10V, f=1MHz

IC=500mA, VCC =10V

IB1=IB2=50mA

* Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2%

Min Typ. Max Unit

120

V

100

V

5

V

0.1 ìA

10 ìA

0.1 ìA

0.13 0.3 V

0.23 0.5 V

0.9 1.25 V

0.8 1.0 V

70 200

100 200 300

55 110

25 55

140 175

MHz

30 pF

80

ns

1200

ns

Marking

Marking

FZT653

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