EMH2314-TL-H Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
EMH2314-TL-H Datasheet PDF : 5 Pages
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EMH2314
--4.5
VDS= --6V
--4.0 ID= --5A
--3.5
VGS -- Qg
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Total Gate Charge, Qg -- nC
IT16901
PD -- Ta
1.4
When mounted on ceramic substrate
(900mm2×0.8mm)
1.2
--100
7
5
SOA
3 IDP= --20A(PW≤10μs)
2
--10
7
5
3
2
--1.0
7
5
3
2
ID=
--5A
Operation
in
thDisCaorpeearat1io0n0(mT1sa0=m2s51°mC10s)0μs
is limited by RDS(on).
--0.1
7
5
Ta=25°C
Single pulse
3
2
--0.01
When mounted on ceramic substrate
(900mm2×0.8mm)
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 5 7--100
Drain-to-Source Voltage, VDS -- V HD16902
1.0
0.8
0.6
Total
1unit
dissipation
0.4
0.2
0
0
1000
25
50
75
100
125
150
175
Ambient Temperature, Ta -- °C HD16903
RθJA -- Pulse Time
100 Duty Cycle=0.5
0.2
0.1
10 0.05
0.02
0.01
1.0
Single Pulse
0.1
0.000001 2 3 5 70.00001 2 3
5 70.0001 2 3 5 7 0.001 2 3 5 7 0.01
Pulse Time, PT -- s
23
5 7 0.1
2 3 5 7 1.0
23
5 7 10
HD
No.8759-4/5
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