FSYE923A0R4 Ver la hoja de datos (PDF) - Intersil

Número de pieza

componentes Descripción

Fabricante

FSYE923A0R4

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

Intersil 

FSYE923A0D, FSYE923A0R

Screening Information

Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).

Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MAX

Gate to Source Leakage Current

IGSS

Zero Gate Voltage Drain Current

IDSS

Drain to Source On Resistance

rDS(ON)

Gate Threshold Voltage

VGS(TH)

NOTES:

7. Or 100% of Initial Reading (whichever is greater).

8. Of Initial Reading.

VGS = ±20V

VDS = 80% Rated Value

TC = 125oC at Rated ID

ID = 1.0mA

±20 (Note 7)

±25 (Note 7)

±20% (Note 8)

±20% (Note 8)

UNITS

nA

µA

Ω

V

Screening Information

TEST

Gate Stress

Pind

Pre Burn-In Tests (Note 9)

Steady State Gate

Bias (Gate Stress)

Interim Electrical Tests (Note 9)

Steady State Reverse

Bias (Drain Stress)

PDA

Final Electrical Tests (Note 9)

JANTXV EQUIVALENT

VGS = -30V, t = 250µs

Optional

MIL-S-19500 Group A,

Subgroup 2 (All Static Tests at 25oC)

MIL-STD-750, Method 1042, Condition B

VGS

TA =

= 80% of Rated Value,

150oC, Time = 48 hours

All Delta Parameters Listed in the Delta Tests

and Limits Table

MIL-STD-750, Method 1042, Condition A

VDS = 80% of Rated Value,

TA = 150oC, Time = 160 hours

10%

MIL-S-19500, Group A, Subgroup 2

NOTE:

9. Test limits are identical pre and post burn-in.

JANS EQUIVALENT

VGS = -30V, t = 250µs

Required

MIL-S-19500 Group A,

Subgroup 2 (All Static Tests at 25oC)

MIL-STD-750, Method 1042, Condition B

VGS

TA =

= 80% of Rated Value,

150oC, Time = 48 hours

All Delta Parameters Listed in the Delta Tests

and Limits Table

MIL-STD-750, Method 1042, Condition A

VDS = 80% of Rated Value,

TA = 150oC, Time = 240 hours

5%

MIL-S-19500, Group A,

Subgroups 2 and 3

Additional Screening Tests

PARAMETER

Safe Operating Area

Unclamped Inductive Switching

Thermal Response

Thermal Impedance

SYMBOL

SOA

IAS

∆VSD

∆VSD

TEST CONDITIONS

VDS = -160V, t = 10ms

VGS(PEAK) = -15V, L = 0.1mH

tH = 10ms; VH = -25V; IH = 1A

tH = 100ms; VH = -25V; IH = 1A

MAX

0.58

18

74

165

UNITS

A

A

mV

mV

6

Share Link: