FQD1N80TF Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQD1N80TF Datasheet PDF : 9 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
101
Operation in This Area
is Limited by R DS(on)
100μ s
100
1 ms
10 ms
DC
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 0.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0.5
100
0 .2
0 .1
0 .05
1 0 -1
0 .02
0 .01
sin g le p u ls e
※ N o tes :
1 . Z θ JC(t) = 2 .7 8 ℃ /W M a x.
2 . D u ty F a c to r, D = t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FQD1N80 / FQU1N80 Rev. C0
www.fairchildsemi.com
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