FQD4P40(2000) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQD4P40 Datasheet PDF : 9 Pages
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Typical Characteristics
101
Top :
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
100
-6.0 V
Bottom : -5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
8
6
V = - 10V
GS
V = - 20V
GS
4
2
※ Note : TJ = 25℃
0
0
3
6
9
12
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
Crss = Cgd
800
C
iss
600
C
oss
400
※ Notes :
1. VGS = 0 V
C
2. f = 1 MHz
rss
200
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
10-1
2
150℃
25℃
-55℃
※ Notes :
1. VDS = -50V
2. 250μs Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.0
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -80V
DS
V = -200V
DS
8
V = -320V
DS
6
4
2
※ Note : ID = -3.5 A
0
0
2
4
6
8 10 12 14 16 18 20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, August 2000
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