FQD4P40(2000) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQD4P40 Datasheet PDF : 9 Pages
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Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
-400
ID = -250 µA, Referenced to 25°C --
VDS = -400 V, VGS = 0 V
--
VDS = -320 V, TC = 125°C
--
VGS = -30 V, VDS = 0 V
--
VGS = 30 V, VDS = 0 V
--
--
0.36
--
--
--
--
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
VGS = -10 V, ID = -1.35 A
-- 2.44
VDS = -50 V, ID = -1.35 A (Note 4)
--
2.5
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 520
--
80
--
11
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -200 V, ID = -3.5 A,
RG = 25 Ω
--
13
--
55
--
35
(Note 4, 5)
--
37
VDS = -320 V, ID = -3.5 A,
--
18
VGS = -10 V
-- 3.8
(Note 4, 5)
--
9.4
--
--
-1
-10
-100
100
-5.0
3.1
--
680
105
15
35
120
80
85
23
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-2.7
A
--
-- -10.8 A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.7 A
--
--
-5.0
V
trr
Reverse Recovery Time
VGS = 0 V, IS = -3.5 A,
-- 260
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
--
1.4
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 62mH, IAS = -2.7A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -3.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, August 2000
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