ZHB6792 Ver la hoja de datos (PDF) - Zetex => Diodes

Número de pieza

componentes Descripción

Fabricante

ZHB6792

SM-8 BIPOLAR TRANSISTOR H-BRIDGE

Zetex => Diodes 

ZHB6792

PNP TRANSISTORS

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown V(BR)CBO -75

Voltage

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO -70

V

IC=-10mA*

Emitter-Base Breakdown

Voltage

V(BR)EBO -5

V

IE=-100µA

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

ICBO

IEBO

VCE(sat)

VBE(sat)

-0.1 µA

-0.1 µA

-0.45 V

-0.5 V

-0.95 V

VCB=-40V

VEB=-4V

IC=-500mA, IB=-5mA*

IC=-1A, IB=-25mA*

IC=-1A, IB=-25mA*

Base-Emitter

Turn-On Voltage

VBE(on)

-0.75

V

IC=-1A, VCE=-2V*

Static Forward Current

hFE

300

Transfer

250

200

Transition Frequency

fT

100

800

IC=-10mA, VCE=-2V*

IC=-500mA, VCE=-2V*

IC=-1A, VCE=-2V*

MHz IC=-50mA, VCE=-5V

f=50MHz

Input Capacitance

Output Capacitance

Switching Times

Cibo

Cobo

ton

toff

225

pF

22

pF

35

ns

750

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

VEB=-0.5V, f=1MHz

VCB=-10V, f=1MHz

IC=-500mA,

IB1=-50mA

IB2=-50mA, VCC=-10V

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