ZHB6792 Ver la hoja de datos (PDF) - Zetex => Diodes
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ZHB6792 Datasheet PDF : 7 Pages
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ZHB6792
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at Tamb = 25°C*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
Derate above 25°C*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
Thermal Resistance - Junction to Ambient*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
SYMBOL
Ptot
VALUE
1.25
2
10
16
100
62.5
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
100
80
60
t1
D=t1
tP
tP
40
20
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
0
100us 1ms 10ms 100ms 1s
Pulse Width
10s 100s
Transient Thermal Resistance
Single Transistor "On"
2.0
1.5
1.0
Dual
Single
0.5
0
0 20 40 60 80 100 120 140 160
T - Temperature (°C)
Derating curve
60
t1
D=t1
50
tP
40
tP
30
20
10
0
100us 1ms 10ms 100ms 1s
Pulse Width
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
10s 100s
Transient Thermal Resistance
Q1 and Q3 or Q2 and Q4 "On"
10
1 Full Copper
Minimum
Copper
Dual Transistors †
Single Transistor
Dual Transistors †
Single Transistor
0.1
0.1
1
10
Pcb Area (inches squared)
Pd v Pcb Area Comparison
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
†"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs
rurned on.
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