FGA15N120ANTDTU_F109 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FGA15N120ANTDTU_F109 Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 13. Gate Charge Characteristics
15
Common Emitter
R = 40
L
T = 25oC
12 C
600V
9
400V
6
Vcc = 200V
3
0
0
20
40
60
80
100
120
Gate Charge, Q [nC]
g
Figure 14. SOA Characteristics
100
Ic M AX (Pulsed)
Ic M AX (Continuous)
10
DC O peration
1
50s
100s
1ms
Single N onrepetitive
0.1
Pulse Tc = 25oC
Curves m ust be derated
linearly with increase
0.01
in tem perature
0.1
1
10
100
C ollector - Em itter Voltage, V [V]
CE
1000
Figure 15. Turn-Off SOA
100
10
Safe Operating Area
V = 15V, T = 125oC
1
GE
C
10
100
1000
Collector-Emitter Voltage, V [V]
CE
Figure 16. Transient Thermal Impedance of IGBT
10
1
0.5
0.1
0.2
0.1
0.05
0.01
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm Zthjc + TC
1
10
©2006 Fairchild Semiconductor Corporation
6
FGA15N120ANTDTU Rev. C1
www.fairchildsemi.com
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