FGB20N60SFD Ver la hoja de datos (PDF) - ON Semiconductor
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FGB20N60SFD Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking
Device
FGB20N60SFD FGB20N60SFD-F085
Package
TO-263
Packaging
Type
Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
ΔBVCES
ΔTJ
ICES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250μA
Collector Cut-Off Current
VCE = VCES, VGE = 0V
IGES
G-E Leakage Current
ICES at 80%*BVCES, 150oC
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250μA, VCE = VGE
IC = 20A, VGE = 15V
IC = 20A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 20A,
VGE = 15V
600
-
-
V
-
0.79
-
V/oC
-
-
250
μA
-
-
250
-
-
±400
nA
4.0
4.8
6.5
V
-
2.2
2.85
V
-
2.4
-
V
-
940
1250
pF
-
110
146
pF
-
40
53
pF
-
10
13
ns
-
16
21
ns
-
90
120
ns
-
24
36
ns
-
0.31
0.41
mJ
-
0.13
0.21
mJ
-
0.44
0.59
mJ
-
12
16
ns
-
16
21
ns
-
95
126
ns
-
28
43
ns
-
0.45
0.60
mJ
-
0.21
0.38
mJ
-
0.66
0.88
mJ
-
63
95
nC
-
7
11
nC
-
32
48
nC
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