ES1CHM2G Ver la hoja de datos (PDF) - Taiwan Memory Technology
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ES1CHM2G Datasheet PDF : 4 Pages
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FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
ES1F-J
10
ES1A-D
ES1A - ES1J
Taiwan Semiconductor
f=1.0MHz
Vsig=50mVp-p
1
0.1
1
10
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
DO-214AC (SMA)
100
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min Max
1.27 1.58
4.06 4.60
2.29 2.83
1.99 2.50
0.90 1.41
4.95 5.33
0.10 0.20
0.15 0.31
Unit (inch)
Min Max
0.050 0.062
0.160 0.181
0.090 0.111
0.078 0.098
0.035 0.056
0.195 0.210
0.004 0.008
0.006 0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
MARKING DIAGRAM
P/N =
G=
YW =
F=
Specific Device Code
Green Compound
Date Code
Factory Code
Unit (mm)
1.68
1.52
3.93
2.41
5.45
Unit (inch)
0.066
0.060
0.155
0.095
0.215
Document Number: DS_D1411076
Version: L14
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