IXTH30N25 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTH30N25 Datasheet PDF : 2 Pages
| |||
IXTH 30N25
Symbol
g
fs
C
iss
Coss
C
rss
td(on)
t
r
td(off)
t
f
Qg(on)
Q
gs
Qgd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = 15 A, pulse test
DS
D
24 32
S
3950
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
510
pF
177
pF
V = 10 V, V = 0.5 • V , I = 30A
GS
DS
DSS D
RG = 3.6 Ω (External)
19
ns
19
ns
79
ns
17
ns
136
nC
V = 10 V, V = 0.5 • V , I = 0.5 I
32
nC
GS
DS
DSS D
D25
52
nC
0.65 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
30 A
120 A
1.5 V
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
Qrr
300
ns
3.0
µC
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
Share Link: 