IXTH30N25 Ver la hoja de datos (PDF) - IXYS CORPORATION

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componentes Descripción

Fabricante

IXTH30N25

Standard Power MOSFET

IXYS CORPORATION 

Advance Technical Information

Standard

Power MOSFET

N-Channel Enhancement Mode

IXTH 30N25

VDSS =

ID (cont) =

RDS(on) =

250 V

30 A

75 mΩ

Symbol Test Conditions

VDSS

VDGR

V

GS

VGSM

ID25

IDM

IAR

E

AR

EAS

dv/dt

PD

T

J

TJM

T

stg

Md

Weight

TJ = 25°C to 150°C

TJ = 25°C to 150°C; RGS = 1 MΩ

Continuous

Transient

TC = 25°C

TC = 25°C, pulse width limited by TJM

T

C

= 25°C

TC = 25°C

IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

TJ ≤ 150°C, RG = 2 Ω

TC = 25°C

Mounting torque

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Maximum Ratings

250

V

250

V

±20

V

±30

V

30

A

120

A

30

A

30

mJ

1.0

J

5 V/ns

TO-247 AD

D (TAB)

G = Gate,

S = Source,

D = Drain,

TAB = Drain

200

W

-55 ... +150

°C

150

°C

-55 ... +150

°C

1.13/10 Nm/lb.in.

6

g

300

°C

Features

l International standard package

JEDEC TO-247 AD

l Low RDS (on) HDMOSTM process

l Rugged polysilicon gate cell structure

l High commutating dv/dt rating

l Fast switching times

Symbol Test Conditions

Characteristic Values

(T

J

=

25°C,

unless

otherwise

specified)

min. typ. max.

VDSS

VGS(th)

IGSS

IDSS

RDS(on)

VGS = 0 V, ID = 250 µA

VDS = VGS, ID = 250 µA

VGS = ±20 VDC, VDS = 0

VDS = VDSS

VGS = 0 V

TJ = 125°C

VGS = 10 V, ID = 15 A

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

250

2

55

V

4V

±100 nA

25 µA

250 µA

75 m Ω

Applications

l Switch-mode and resonant-mode

power supplies

l Motor controls

l Uninterruptible Power Supplies (UPS)

l DC choppers

Advantages

l Easy to mount with 1 screw

(isolated mounting screw hole)

l Space savings

l High power density

© 2001 IXYS All rights reserved

98872 (12/01)

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