EFC120B-100F Ver la hoja de datos (PDF) - Excelics Semiconductor, Inc.
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EFC120B-100F Datasheet PDF : 2 Pages
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Excelics
EFC120B-100F
DATA SHEET
Low Distortion GaAs Power FET
• HERMETIC 100mil CERAMIC FLANGE PACKAGE 10 Rad.
98
30
34
• +28.0dBm TYPICAL OUTPUT POWER
• HIGH BVgd FOR 10V BIAS
• 9.0dB TYPICAL POWER GAIN AT 8GHz
63 Dia.
• 0.3 X 1200 MICRON RECESSED “MUSHROOM”
G
D
GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
24
98 79
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
256 TYP. 256 TYP.
35
24
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
All Dimensions In mils
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P1dB
Output Power at 1dB Compression
Vds=10V, Ids=50% Idss
f = 8GHz
f = 12GHz
28.0
26.0 28.0
dBm
G1dB
Gain at 1dB Compression
Vds=10V, Ids=50% Idss
f = 8GHz
9.0
f = 12GHz 4.0 6.0
dB
PAE
Gain at 1dB Compression
Vds=10V, Ids=50% Idss
f = 12GHz
30
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
160 260 360 mA
Gm
Transconductance
Vds=3V, Vgs=0V
100 140
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=3.0mA
-2.5 -4.0 V
BVgd
Drain Breakdown Voltage Igd=1.2mA
-15 -20
V
BVgs
Source Breakdown Voltage Igs=1.2mA
-10 -17
V
Rth
Thermal Resistance
43*
*Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
14V
10V
Vgs
Gate-Source Voltage
-8V
-4.5V
Ids
Drain Current
Idss
270mA
Igsf
Forward Gate Current
30mA
5mA
Pin
Input Power
26dBm
Tch
Channel Temperature
175oC
@ 3dB Compression
150oC
Tstg
Storage Temperature
-65/175oC
-65/150oC
Pt
Total Power Dissipation
3.2W
2.7W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
oC/W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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