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MIE-534L3

GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Unity Opto Technology 

GaAlAs T-1 3/4 PACKAGE

INFRARED EMITTING DIODE

MIE-534L3

Description

The MIE-534L3 is an infrared emitting diode in GaAlAs

on GaAlAs technology molded in water clear plastic

package .

Package Dimensions

φ5.05

(.200)

7.62

(.300)

Unite: mm ( inches )

5.90

(.230)

5.47

(.215)

Features

l Suitable for DC and high pulse current operation

SEE NOTE 2

1.00

(.040)

FLAT DENOTES CATHODE

l Standard T-1 3/4 ( φ 5mm ) package

l Peak wavelength λp = 880 nm

l Good spectral matching to si-photodetector

l Radiation angle : 30°

0.50 TYP.

(.020)

23.40 MIN

(.920)

2.54NOM.

(.100)

SEE NOTE 3

A

1.00MIN.

(.040)

C

NOTES :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

Parameter

Power Dissipation

Peak Forward Current(300pps,10µs pulse)

Continuos Forward Current

Reverse Voltage

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

'@ TA=25oC

Maximum Rating

Unit

120

mW

1

A

100

mA

5

V

-55oC to +100oC

-55oC to +100oC

260oC for 5 seconds

Unity Opto Technology Co., Ltd.

11/20/2000

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