MIE-114H4 Ver la hoja de datos (PDF) - Unity Opto Technology
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MIE-114H4 Datasheet PDF : 2 Pages
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AlGaAs HIGH POWER SIDE LOOK PACKAGE
INFRARED EMITTING DIODE
MIE-114H4
Description
The MIE-114H4 is a AlGaAs infrared emitting diode
molded in clear, lensed side looking package .
The MIE-114H4 provides a broad range of
intensity selection .
Package Dimensions
4.45±0.20
(.175±.008)
2.22
((.0.08877))
5.72±0.2
(.225±.008)
Unit: mm ( inches )
1.22±0.10
(.048±.004)
0.76±0.10
(.030±.008)
1.55±0.02
(.061±.008)
Features
l High power
l Mechanically and spectrally matched to
the MID-11422 of phototransistor .
12.7 MIN.
(.500)
1.0 MIN.
(.040)
C
0.5 TYP.
(.020)
2.54 NOM.
(.100)
SEE NOTE 3
A
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
Parameter
Power Dissipation
Peak Forward Current
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
@ TA=25oC
Maximum Rating
Unit
75
mW
1
A
50
mA
5
V
-55oC to + 100oC
-55oC to + 100oC
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
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