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STB60NE06-16 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STB60NE06-16
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
STMicroelectronics
STB60NE06-16 Datasheet PDF : 9 Pages
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STB60NE06-16
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1:
Unclamped Inductive Load Test Circuit
Fig. 2:
Unclamped Inductive Waveform
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