STB60NE06-16 Ver la hoja de datos (PDF) - STMicroelectronics
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STB60NE06-16 Datasheet PDF : 9 Pages
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STB60NE06-16
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
(di/ dt )on
Qg
Qgs
Qgd
P a ra m et er
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 30 V
RG =4.7 Ω
VDD = 48 V
RG = 47 Ω
VDD = 48 V
ID = 30 A
VGS = 10 V
ID = 60 A
VGS =10 V
ID = 60 A VGS = 10 V
Min.
Typ .
40
125
280
115
25
40
Max.
60
180
160
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 60 A
RG =4.7 Ω VGS = 10 V
Min.
Typ .
15
150
180
Max.
25
210
260
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 60 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 60 A
VDD = 30 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ .
Max.
60
240
Unit
A
A
1.5
V
100
ns
0.4
µC
8
A
Safe Operating Area
Thermal Impedance
3/9
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