BCW66H(2006) Ver la hoja de datos (PDF) - Diotec Semiconductor Germany

Número de pieza

componentes Descripción

Fabricante

BCW66H
(Rev.:2006)

Surface Mount General Purpose Si-Epi-Planar Transistors

Diotec Semiconductor Germany  

BCW66F ... BCW66H

BCW66F ... BCW66H

NPN

Surface Mount General Purpose Si-Epi-Planar Transistors

Si-Epi-Planar Universaltransistoren für die Oberflächenmontage

Version 2006-07-31

2.9 ±0.1

1.1

0.4

3

Type

Code

1

2

1.9

Dimensions - Maße [mm]

1=B 2=E 3=C

Power dissipation – Verlustleistung

Plastic case

Kunststoffgehäuse

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

NPN

250 mW

SOT-23

(TO-236)

0.01 g

Maximum ratings (TA = 25°C)

Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO

Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO

Collector-Base-voltage – Kollektor-Basis-Spannung C open VEB0

Power dissipation – Verlustleistung

Ptot

Collector current – Kollektorstrom (dc)

IC

Peak Collector current – Kollektor-Spitzenstrom

ICM

Peak Base current – Basis-Spitzenstrom

IBM

Junction temperature – Sperrschichttemperatur

Tj

Storage temperature – Lagerungstemperatur

TS

Grenzwerte (TA = 25°C)

BCW66F ... BCW66H

45 V

75 V

5V

250 mW 1)

800 mA

1000 mA

200 mA

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C)

DC current gain – Kollektor-Basis-Stromverhältnis 2)

VCE = 10 V, IC = 100 µA

BCW66F

hFE

BCW66G

hFE

BCW66H

hFE

VCE = 1 V, IC = 10 mA

BCW66F

hFE

BCW66G

hFE

BCW66H

hFE

VCE = 1 V, IC = 100 mA

BCW66F

hFE

BCW66G

hFE

BCW66H

hFE

VCE = 2 V, IC = 500 mA

BCW66F

hFE

BCW66G

hFE

BCW66H

hFE

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

35

–

–

50

–

–

80

–

–

75

–

–

100

–

–

180

–

–

100

160

250

160

250

400

250

350

630

–

35

–

–

60

–

–

100

–

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

© Diotec Semiconductor AG

http://www.diotec.com/

1

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