BCW66H Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
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BCW66H Datasheet PDF : 2 Pages
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BCW65
BCW66
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW65 V(BR)CEO 32
BCW66
45
V ICEO=10mA
ICEO=10mA
BCW65 V(BR)CES 60
BCW66
75
V IC=10µA
IC=10µA
Emitter-Base Breakdown Voltage
V(BR)EBO 5
V IEBO=10µA
Collector-Emitter
Cut-off Current
BCW65 ICES
20
20
nA
µA
VCES
VCES
=
=
32V
32V
,
Tamb=150oC
BCW66
20
20
nA
µA
VCES
VCES
=
=
45V
45V
,Tamb=150oC
Emitter-Base Cut-Off Current
IEBO
20 nA VEBO=4V
Collector-Emitter Saturation Voltage VCE(sat)
0.3 V IC=100mA, IB=10mA
0.7 V IC= 500mA, IB=50mA*
Base-Emitter Saturation Voltage
VBE(SAT)
2 V IC=500mA, IB=50mA*
Static
Forward
Current
Transfer
BCW65A hFE
BCW66F
35
75
100 160 250
35
IC=100µA, VCE =10V
IC= 10mA, VCE = 1V
IC=100mA, VCE = 1V*
IC=500mA, VCE = 2V*
BCW65B hFE
BCW66G
50
110
160 250 400
60
IC=100µA, VCE =10V
IC= 10mA, VCE = 1V
IC=100mA, VCE = 1V*
IC=500mA, VCE = 2V*
BCW65C hFE
BCW66H
80
180
250 350 630
100
IC=100µA, VCE =10V
IC= 10mA, VCE = 1V
IC=100mA, VCE = 1V*
IC=500mA, VCE = 2V*
Transition Frequency
fT
100
MHz IC =20mA, VCE =10V
f = 100MHz
Collector-Base Capacitance
Ccbo
8
12 pF
Emitter-Base Capacitance
Cebo
80 pF
Noise Figure
N
2
10 dB
Switching times:
Turn-On Time
Turn-Off Time
ton
100 ns
toff
400 ns
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
VCBO=10V, f =1MHz
VEBO=0.5V, f =1MHz
IC= 0.2mA, VCE = 5V
RG =1kΩ
IC=150mA
IB1=- IB2 =15mA
RL=150Ω
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