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CPH3356-TL-H

Power MOSFET –20V, 137mΩ, –2.5A, Single P-Channel

ON Semiconductor 

CPH3356

Power MOSFET

–20V, 137mΩ, –2.5A, Single P-Channel

This Power MOSFET is produced using ON Semiconductor’s trench

technology, which is specifically designed to minimize gate charge and

low on resistance. This devices is suitable for applications with low gate

charge driving or low on resistance requirements.

Features

• Low On-Resistance

• 1.8V drive

• ESD Diode-Protected Gate

• Pb-Free, Halogen Free and RoHS compliance

Typical Applications

• Load Switch

• Motor Driver

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)

Parameter

Symbol

Value

Unit

Drain to Source Voltage

VDSS

−20

V

Gate to Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

−2.5

A

Drain Current (Pulse)

PW ≤ 10μs, duty cycle ≤ 1%

IDP

−10

A

Power Dissipation

When mounted on ceramic substrate

PD

(900mm2 × 0.8mm)

1

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Junction to Ambient

When mounted on ceramic substrate

(900mm2 × 0.8mm)

Symbol

RθJA

Value

Unit

125 °C/W

www.onsemi.com

VDSS

−20V

RDS(on) Max

137mΩ@ −4.5V

203mΩ@ −2.5V

323mΩ@ −1.8V

ID Max

−2.5A

ELECTRICAL CONNECTION

P-Channel

3

1

1 : Gate

2 : Source

3 : Drain

2

PACKING TYPE : TL

MARKING

TL

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2015

1

April 2015 - Rev. 2

Publication Order Number :

CPH3356/D

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