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CPH3348 Datasheet PDF : 5 Pages
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CPH3348
Power MOSFET
–12V, 70mΩ, –3A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
Low On-Resistance
1.8V drive
Pb-Free and RoHS compliance
Halogen Free compliance : CPH3348-TL-W
Typical Applications
Load Switch
DC/DC Converter
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
12
V
Gate to Source Voltage
VGSS
10
V
Drain Current (DC)
ID
3
A
Drain Current (Pulse)
PW 10s, duty cycle 1%
IDP
12
A
Power Dissipation
When mounted on ceramic substrate
PD
(1200mm2 0.8mm)
1.0
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : This product is designed to “ESD immunity<200V*”, so please take care when
handling.
*Machine Model
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(1200mm2 0.8mm)
Symbol
RJA
Value
Unit
125 C/W
www.onsemi.com
VDSS
12V
RDS(on) Max
70mΩ@ 4.5V
115mΩ@ 2.5V
215mΩ@ 1.8V
ID Max
3A
ELECTRICAL CONNECTION
P-Channel
3
1
1 : Gate
2 : Source
3 : Drain
2
PACKING TYPE : TL MARKING
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
July 2015 - Rev. 2
Publication Order Number :
CPH3348/D
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