CQY37N Ver la hoja de datos (PDF) - Vishay Semiconductors
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CQY37N Datasheet PDF : 5 Pages
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CQY37N
Vishay Semiconductors
Infrared Emitting Diode, 950 nm,
GaAs
180
160
140
120
100
80 RthJA = 450 K/W
60
40
20
0
0
21319
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
60
RthJA = 450 K/W
40
20
0
0
21320
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
IF = 50 mA, tp 20 ms
VF
Temperature coefficient of VF
IF = 100 mA
TKVF
Breakdown voltage
IR = 100 μA
V(BR)
5
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
Radiant intensity
Radiant power
Temperature coefficient of e
IF = 50 mA, tp 20 ms
IF = 50 mA, tp 20 ms
IF = 50 mA
Ie
2.2
e
4.8
TKe
Angle of half intensity
Peak wavelength
Spectral bandwidth
IF = 50 mA
p
IF = 50 mA
Rise time
IF = 100 mA
tr
IF = 1.5 A, tp/T = 0.01, tp 10 μs
tr
Virtual source diameter
d
TYP.
1.3
- 1.3
50
5
10
- 0.8
± 12
950
50
800
400
1.2
MAX.
1.6
11
17.8
UNIT
V
mV/K
μA
pF
mW/sr
mW
%/K
deg
nm
nm
ns
ns
mm
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 4
10 3
10 2
10 1
10 0
10-1
0
1
2
3
4
94 7996
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
1.2
1.1
IF = 10 mA
1.0
0.9
0.8
0.7
0
94 7990
20
40
60
80 100
Tamb - Ambient Temperature (°C)
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
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2
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81002
Rev. 1.7, 08-Mar-11
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