GaAs FET
Data Sheet
• Low noise (Fmin = 1.4 dB @ 4 GHz)
• High gain (11.5 dB typ. @ 4 GHz)
• For oscillators up to 12 GHz
• For amplifiers up to 6 GHz
• Ion implanted planar structure
• Chip all gold metallization
• Chip nitride passivation
ESD: Electrostatic discharge sensitive device, ob-
serve handling precautions!
CFY 30
SOT-143
Type
Marking Ordering Code
(tape and reel)
CFY 30 A2
Q62703-F97
1) Dimensions see Page 8.
Pin Configuration
1234
S DS G
Package1)
P-SOT-143-4-1
Maximum Ratings
Symbol
Value
Drain-source voltage
VDS
5
Drain-gate voltage
VDG
7
Gate-source voltage
VGS
– 4 … + 0.5
Drain current
ID
80
Channel temperature
TCh
150
Storage temperature range
Tstg
– 40 … + 150
Total power dissipat. (TS ≤ 48 °C)1)
Ptot
250
1) TS is measured on the source 1 lead at the soldering point to the PCB.
Unit
V
V
V
mA
°C
°C
mW
Thermal Resistance
Symbol
Value
Channel-soldering point1)
RthChS
< 320
1) TS is measured on the source 1 lead at the soldering point to the PCB.
Data Book
1
Unit
K/W
03.00