CD4017BMS Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

CD4017BMS

CMOS Counter/Dividers

Renesas Electronics 

CD4017BMS, CD4022BMS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

PARAMETER

Propagation Delay Clock

to Decode Out

Propagation Delay Clock

to Carry Out

Propagation Delay Reset

to out

Transition Time

Maximum Clock Input Fre-

quency

Minimum Setup Time

Clock Inhibit to Clock

Setup

Minimum Reset Pulse

Width

Minimum Clock Pulse

Width

Input Capacitance

NOTES:

SYMBOL

TPHL1

TPLH1

TPHL2

TPLH2

TPHL3

TPLH3

TTHL

TTLH

FCL

TS

TW

TW

CIN

CONDITIONS

VDD = 10V

VDD = 15V

VDD = 10V

VDD = 15V

VDD = 10V

VDD = 15V

VDD = 10V

VDD = 15V

VDD = 10V

VDD = 15V

VDD = 5V

VDD = 10V

VDD = 15V

VDD = 5V

VDD = 10V

VDD = 15V

VDD = 5V

VDD = 10V

VDD = 15V

Any Input

NOTES

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2, 3

1, 2

TEMPERATURE

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

+25oC

LIMITS

MIN

MAX

-

270

-

170

-

250

-

160

-

230

-

170

-

100

-

80

5.0

-

5.5

-

-

230

-

100

-

70

-

260

-

110

-

60

-

200

-

90

-

60

-

7.5

UNITS

ns

ns

ns

ns

ns

ns

ns

ns

MHz

MHz

ns

ns

ns

ns

ns

ns

ns

ns

ns

pF

1. All voltages referenced to device GND.

2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial

design release and upon design changes which would affect these characteristics.

3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

Supply Current

N Threshold Voltage

N Threshold Voltage

Delta

P Threshold Voltage

P Threshold Voltage

Delta

Functional

Propagation Delay Time

SYMBOL

CONDITIONS

IDD VDD = 20V, VIN = VDD or GND

VTN VDD = 10V, ISS = -10A

VTN VDD = 10V, ISS = -10A

VTP

VTP

VSS = 0V, IDD = 10A

VSS = 0V, IDD = 10A

F

TPHL

TPLH

VDD = 18V, VIN = VDD or GND

VDD = 3V, VIN = VDD or GND

VDD = 5V

NOTES: 1. All voltages referenced to device GND.

2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.

NOTES

1, 4

1, 4

1, 4

TEMPERATURE

+25oC

+25oC

+25oC

LIMITS

MIN

MAX

-

25

-2.8

-0.7

-

1

1, 4

+25oC

0.2

2.8

1, 4

+25oC

-

1

1

1, 2, 3, 4

+25oC

+25oC

3. See Table 2 for +25oC limit.

4. Read and Record

VOH >

VDD/2

-

VOL <

VDD/2

1.35 x

+25oC

Limit

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC

PARAMETER

SYMBOL

DELTA LIMIT

Supply Current - MSI-2

IDD

 1.0A

Output Current (Sink)

IOL5

 20% x Pre-Test Reading

Output Current (Source)

IOH5A

 20% x Pre-Test Reading

UNITS

A

V

V

V

V

V

ns

FN3297 Rev 0.00

August 1998

Page 4 of 10

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