PXT3904 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

PXT3904

NPN Switching Transistor

Galaxy Semi-Conductor 

Production specification

NPN Switching Transistor

PXT3904

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX UNIT

Collector-base breakdown voltage

V(BR)CBO IC=10μA, IE=0

60

V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA ,IB=0

40

V

Emitter-base breakdown voltage

V(BR)EBO IE=10μA, IC=0

6

V

Collector cut-off current

ICBO

VCB=30V, IE=0

50 nA

Emitter cut-off current

IEBO

VEB=6V,IC=0

50 nA

DC current gain

VCE=1V, IC=0.1mA

VCE=1V, IC=1mA

hFE

VCE=1V, IC=10mA

VCE=1V, IC=50mA

VCE=1V, IC=100mA

60

80

100 300

60

30

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector Capacitance

Emitter Capacitance

Noise Figure

VCE(sat)

VBE(sat)

fT

Cc

Ce

F

IC=10mA ,IB=1mA

IC=50mA ,IB=5mA

IC=10mA, IB=1mA

IC=50mA ,IB=5mA

VCE=20V,IC=10mA,

f=100MHz

VCB=5V, f=1MHz ,IE=0

0.2

V

0.3

0.65 0.85

V

0.95

300

MHz

4

pF

VEB=0.5V, f=1MHz ,IC=0

IC=100uA,VCE=5V,RS=1kΩ

F=10Hz to 7.5kHz

8

pF

5

dB

E102

Rev.A

www.gmicroelec.com

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