BU323Z Ver la hoja de datos (PDF) - Inchange Semiconductor
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componentes Descripción
Fabricante
BU323Z Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU323Z
DESCRIPTION
·With TO-220 packaging
·Very high DC current gain
·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·AC-DC motor control
·Electronic ignition
·Alternator regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current- Continuous
3
A
PC
Collector Power Dissipation
150
W
Tj
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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