BUK7606-30 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BUK7606-30 Datasheet PDF : 8 Pages
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Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7606-30
VGS / V
10
7506-30
8
VDS / V = 6
24
6
4
2
0
0
20
40
60
80
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 75 A; parameter VDS
IF / A
100
7506-30
80
60
Tj / C = 175
25
40
20
0
0
0.5
1
1.5
2
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 75 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
+ VDD
RD
VDS
-
VGS
0
RG
T.U.T.
Fig.17. Switching test circuit.
December 1997
6
Rev 1.100
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