BTB16G-6-B-TA3-T Ver la hoja de datos (PDF) - Unisonic Technologies

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BTB16G-6-B-TA3-T

16A TRIACS

Unisonic Technologies 

BTB16

Preliminary

TRIAC

 ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

RMS On-State Current (Full Sine Wave) TC=86°C

IT(RMS)

16

A

Non Repetitive Surge Peak F=50 Hz t=20ms

160

A

On-State Current (Full

ITSM

Cycle, TJ initial=25°C)

F=60 Hz t=16.7ms

168

A

I2t Value for Fusing

tP=10ms

I2t

144

A2s

Critical Rate of Rise of

On-State Current IG=2xIGT, F=120 Hz TJ=125°C

tr≤100ns

dI/dt

50

A/µs

Non Repetitive Surge Peak

Off-State Voltage

tP=10ms

TJ=25°C

VDSM/VRSM

VDRM/VRRM+100

V

Peak Gate Current

tP=20µs TJ=125°C

IGM

4

A

Average Gate Power Dissipation

TJ=125°C

PG(AV)

1

W

Operating Junction Temperature

TJ

-40~+125

°C

Storage Junction Temperature

TSTG

-40~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL RESISTANCES

PARAMETER

Junction to Ambient

Junction to Case (AC)

SYMBOL

θJA

θJC

RATINGS

60

1.2

 ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise specified.)

UNIT

°C/W

°C/W

FOR STANDARD TYPE (4 QUADRANTS)

PARAMETER

SYMBOL

TEST CONDITIONS

Gate Trigger Current

(Note 1)

Gate Trigger Voltage

Gate Non-Trigger

Voltage

Holding Current

(Note 2)

Latching Current

Critical Rate of Rise of

Off-State Voltage

(Note 2)

Critical Rate of Rise of

Off-State Voltage at

Commutation(Note 2)

IGT

VGT

VGD

IH

IL

dV/dt

VD=12V, RL=33Ω

VD=VDRM, RL=3.3kΩ,

TJ=125°C

IT=500mA

I-II-III

IV

ALL

ALL

IG=1.2IGT

I-III-IV

II

VD=67%VDRM, Gate Open,

TJ=125°C

(dV/dt)c (dI/dt)c=7A/ms, TJ= 125°C

 STATIC CHARACTERISTICS

C

MIN TYP

MAX MIN

25

50

1.3

B

TYP

MAX

UNIT

50 mA

100 mA

1.3 V

0.2

0.2

V

25

50 mA

40

60 mA

80

120 mA

200

400

V/µs

5

10

V/µs

PARAMETER

SYMBOL

TEST CONDITIONS

Peak On-State Voltage(Note 2)

VTM

ITM=22.5A, tp=380μs TJ=25°C

Threshold Voltage(Note 2)

VTO

Dynamic Resistance(Note 2)

RD

TJ=125°C

TJ=125°C

Repetitive Peak Off-State Current

IDRM

IRRM

VDRM=VRRM

TJ=25°C

TJ=125°C

Note: 1. Minimum IGT is guaranteed at 5% of IGT max.

2. For both polarities of MT2 referenced to MT1.

MIN TYP MAX UNIT

1.55 V

0.85 V

25 mΩ

5 μA

2 mA

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R401-044.b

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