BSM150GB170DN2 Ver la hoja de datos (PDF) - eupec GmbH

Número de pieza

componentes Descripción

Fabricante

BSM150GB170DN2

IGBT Power Module

eupec GmbH 

BSM 150 GB 170 DN2

Typ. gate charge

VGE = ƒ(QGate)

parameter: IC puls = 150 A

20

V

VGE 16

14

800 V

1200 V

12

10

8

6

4

2

0

0.0

0.4

0.8

1.2

1.6 µC 2.2

QGate

Reverse biased safe operating area

ICpuls = f(VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tp ≤ 1 ms, L < 25 nH

2.5

Typ. capacitances

C = f (VCE)

parameter: VGE = 0, f = 1 MHz

10 2

nF

C

10 1

Ciss

Coss

10 0

Crss

10 -1

0

5 10 15 20 25 30 V 40

VCE

Short circuit safe operating area

ICsc = f(VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tp ≤ 10 µs, L < 25 nH

12

ICpulsIC

di/dt =

1.5

1000A/µs

3000A/µs

5000A/µs

1.0

0.5

ICsc/IC

di/dt = 1000A/µs

8

3000A/µs

5000A/µs

6

4

° allowed numbers of

short circuit: <1000

° time between short

2 circuit: >1s

0.0

0 200 400 600 800 1000 1200 1400 V 1800

VCE

0

0 200 400 600 800 1000 1200 1400 V 1800

VCE

6

Oct-27-1997

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