BSP317 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BSP317

SIPMOS ® Small-Signal Transistor

Siemens AG 

BSP 317

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter: ID = -0.37 A, VGS = -10 V

Gate threshold voltage

VGS (th) = ƒ(Tj)

parameter: VGS = VDS, ID = -1 mA

18

Ω

RDS (on) 14

-4.6

V

-4.0

VGS(th) -3.6

12

10

8

98%

-3.2

-2.8

-2.4

98%

-2.0

6

4

2

0

-60

-20

typ

20

60

100 °C 160

Tj

-1.6

-1.2

-0.8

-0.4

0.0

-60

-20

typ

2%

20

60

100 °C 160

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS=0V, f = 1 MHz

10 3

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

-10 1

pF

C

10 2

Ciss

Coss

A

I

F

-10 0

10 1

Crss

10 0

0

-5 -10 -15 -20 -25 -30 V -40

VDS

Semiconductor Group

7

-10 -1

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

-10 -2

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0

VSD

Sep-12-1996

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