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BSP317E6327 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza
componentes Descripción
Fabricante
BSP317E6327 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BSP 317
Typ. output characteristics
ID = Æ’(VDS)
parameter: tp = 80 µs
-0.9
Ptot = 2W
A
jki
lh g f
e
ID -0.7
-0.6
-0.5
-0.4
-0.3
-0.2
VGS [V]
a -2.0
b -2.5
c -3.0
d -3.5
e -4.0
d f -4.5
g -5.0
h -6.0
c
i -7.0
j -8.0
k -9.0
b l -10.0
-0.1
a
0.0
0 -1 -2 -3 -4 -5 -6 -7 V -9
VDS
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
Typ. drain-source on-resistance
RDS (on) = Æ’(ID)
parameter: tp = 80 µs, Tj = 25 °C
19
Ωa
16
RDS (on)
14
b
c
d
12
10
8
6
e
f
4
g
ki jhl
2
VGS [V] =
ab
c
d
e
f
ghi
j
kl
-2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0
0
0.00 -0.10 -0.20 -0.30 -0.40
A -0.60
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
-1.8
A
ID -1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
Semiconductor Group
6
0.65
S
0.55
gfs 0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 A -1.6
ID
Sep-12-1996

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