BSP317E6327 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BSP317E6327

SIPMOS ® Small-Signal Transistor

Siemens AG 

BSP 317

Maximum Ratings

Parameter

Chip or operating temperature

Storage temperature

Thermal resistance, chip to ambient air

Therminal resistance, junction-soldering point 1)

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

Tj

Tstg

RthJA

RthJS

Values

Unit

-55 ... + 150 °C

-55 ... + 150

≤ 70

K/W

≤ 10

E

55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = -0.25 mA, Tj = 25 °C

Gate threshold voltage

VGS=VDS, ID = -1 mA

Zero gate voltage drain current

VDS = -200 V, VGS = 0 V, Tj = 25 °C

VDS = -200 V, VGS = 0 V, Tj = 125 °C

VDS = -130 V, VGS = 0 V, Tj = 25 °C

Gate-source leakage current

VGS = -20 V, VDS = 0 V

Drain-Source on-state resistance

VGS = -10 V, ID = -0.37 A

V(BR)DSS

-200

VGS(th)

-0.8

IDSS

-

-

-

IGSS

-

RDS(on)

-

-

-1.1

-0.1

-10

-

-10

3.4

-

-2

-1

-100

-100

-100

6

Unit

V

µA

nA

nA

Ω

Semiconductor Group

2

Sep-12-1996

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